منابع مشابه
DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE PHOTODIODE
An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heteroi...
متن کاملInGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product.
Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on ...
متن کاملModelling of High Quantum Efficiency Avalanche Photodiode
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...
متن کاملHigh-Speed Single-Photon Detection Using 2-GHz Sinusoidally Gated InGaAs/InP Avalanche Photodiode
We report a telecom-band single-photon detector for highspeed quantum key distribution systems. The single-photon detector is based on a sinusoidally gated InGaAs/InP avalanche photodiode. The gate repetition frequency of the single-photon detector reached 2 GHz. A quantum efficiency of 10.5 % at 1550 nm was obtained with a dark count probability per gate of 6.1×10−7 and an afterpulsing probabi...
متن کاملAvalanche photodiode A User Guide
Introduction Avalanche photodiode detectors (APD) have and will continue to be used in many diverse applications such as laser range finders, data communications or photon correlation studies. This paper discusses APD structures, critical performance parameter and excess noise factor. For low-light detection in the 200to 1150-nm range, the designer has three basic detector choices the silicon P...
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ژورنال
عنوان ژورنال: Measurement Science and Technology
سال: 2019
ISSN: 0957-0233,1361-6501
DOI: 10.1088/1361-6501/ab41c6